A new thermoelectric device developed by scientists at Penn State University shows great promise in providing cooling solutions for next-generation electronics. With smaller and more powerful components, these electronics require improved cooling capabilities.
The new thermoelectric cooler offers enhanced cooling power density and efficiency compared to current commercial units, making it a potential solution for managing heat in high-power electronics.
Thermoelectric Cooler
A research team led by Bed Poudel, a research professor in the Department of Materials Science and Engineering at Penn State, has demonstrated that the new material used in the thermoelectric device can outperform existing cooling modules while remaining competitive in terms of cost-effectiveness.
This development holds significant potential for the future generation of electronics. Thermoelectric coolers operate by utilizing the application of electricity to transfer heat from one side of the device to the other, resulting in a temperature disparity.
Placing the colder side of the device on electronic components that generate heat aids in extracting excess heat and regulating temperature. However, as these components become more potent, thermoelectric coolers necessitate an increased capacity for heat dissipation.
The recently developed thermoelectric device showcased an impressive 210% augmentation in cooling power density compared to the leading commercial device composed of bismuth telluride.
Additionally, it has the potential to uphold a similar coefficient of performance (COP), which gauges the effectiveness of cooling in relation to the energy consumed.
Specialized Annealing Process
The device is manufactured using a compound comprising half-Heusler alloys, a category of materials renowned for their applications in energy-related fields. These materials possess exceptional attributes such as robust strength, thermal stability, and efficiency.
To enhance its performance, the researchers employed a specialized annealing process that altered the material's microstructure, reducing defects and enlarging grain size.
Consequently, there were fewer grain boundaries, thereby improving the material's electrical and thermal conductivity. The reduction of grain boundaries led to a significant increase in carrier mobility, which elevated the material's power factor.
This critical characteristic determines the maximum cooling power density and is particularly advantageous for cooling high-powered laser diodes or situations requiring the targeted removal of heat from small areas.
Furthermore, the material produced the highest average figure of merit, or efficiency, among half-Heusler materials in the temperature range of 300 to 873 degrees Kelvin.
This range encompasses near-room-temperature thermoelectric applications, indicating a promising strategy for optimizing half-Heusler materials in this temperature range.
"As a country we are investing a lot in the CHIPS and Science Act, and one problem might be how the microelectronics can handle high-power density as they get smaller and operate at higher power," Poudel said in a statement. "This technology may be able to address some of these challenges."
The findings of the team were published in the journal Nature Communications.
