The tech world knows by now that the Snapdragon 835 is already a done deal. Qualcomm has officially confirmed its existence, providing more details and even eclipses the data that has been made available for its predecessor — the Snapdragon 830.
There was a lull after its announcement, except for some rumors, but now it appears that the chipset paid GFXBench a visit and effectively provided more insights into the Snapdragon 835's performance.
Best In Class
Based on the data indicated in the GFXBench test, the Snapdragon 835 trounced all existing premium handsets including the iPhone 7 Plus, Samsung Galaxy S7 edge, and the OnePlus 3T.
It is interesting to note that the 835 chipset used in the test is still a development unit, which means performance could still significantly improve once it launches in the early part of 2017.
Snapdragon 835 Specs And Features
Aside from the GPU Performance, the GFXBench test also included hardware data. The octa-core CPU, which clocks at 2.2 GHz, is a case in point. The technology is aligned with what has been floated about recently that the chip will sport those eight cores, which will most likely be the latest version of Qualcomm's Kryo range.
All eight cores will not be running at 2.2 GHz, based on reports. Only four will get clocked that way while the four others will have lower power but with more efficiency.
Also, while the device rocking the Snapdragon 835 has not been identified, it is listed as a 5.9-inch gizmo, outfitted with 3.7 GB of RAM, 53 GB internal storage and a 20 MP rear-facing camera. The selfie camera is also quite surprising since it is capable of 4K video.
What We Know So Far
Aside from the numbers and data cited above, tech watchers also have more concrete information on hand. For example, it is being produced through Samsung's 10nm FinFET technology, a groundbreaking semiconductor processing tech.
It is distinguished from the current 14nm technology employed by most semiconductor manufacturers by its capability to make connections at molecular-level size fractions. The 10nm FinFET method allows the production of better performing devices that have low power consumption.
In real world performance, the Snapdragon 835 will purportedly offer 30 percent improvement in terms of efficiency, a 27 percent boost in performance and the reduction of power consumption by up much as 40 percent.
The chip is expected to debut in the Mobile World Congress alongside the launch of the Samsung Galaxy S8.
